Practical Components -TEG FC120JY
Chip Structure
- Base Layer : P-TEOS
- Metal layer : TiN / Al-0.5%Cu
- Passivation Layer : HDP / P-SiN
(option) Polyimide
*TEOS : Tetraethoxysilane
*HDP : High Density Plasma
Specifications | |
TYPE | B |
Wafer Thickness | 725±25μm |
Wafer Size | 8 inch |
Chip Size | 10.0mm |
Bump Pitch | 120μm |
Function | Daisy Chain |
Pad Config | Area |
Electrode | Cu Pillar |
Pad Size | 80μm |
Passivation Opening | φ20μm |
Polyimide Opening | φ40μm |
UBM Size | φ65μm |
Bump Size | φ60μm |
Scribe Width | 100μm |
Number of Pad | 5776pads/chip(76x76) |
Number of Chip | 208 chips/wafer |