WALTS-TEG HBM_T-0100JY

Wafer Size	8 inch
Wafer Thickness	725±25µm
Chip Size	10.0mm×8.0mm
Pad Pitch	① 35μm×40μm(I/O area) ② 90μm x 160µm(Staggerd area)
Function	Daisy Chain
Electrode	Cu pillar
Pad SIze	① 27μm■ ② 27μm■
Passivation Opening	① 8μm● ② 8μm●
Bump Size	① 18μm● ② 18μm● ③ 18µm●
Number of Pad	①7200 pads(I/O area) ②6544 pads(Staggerd area)
Number of Bump	7200 bamps(I/O area) ②6544 bamps(Staggerd area) ③912 bamps(Dummy bump area)
Scribe Width	120μm
Number of Chip	312 chips/wafer